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| MOS FET Array STA508A Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse)*1 PT Ratings 120 20 6 10 4 (Ta = 25C) 20 (Tc = 25C) EAS *2 80 mJ Tch C 150 Tstg C -55 to +150 *1 PW 100s, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 50 (Ta=25C) Unit V V A A W W Electrical Characteristics Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss td (on) tr td (off) tf VSD Test Conditions ID = 100A, VGS = 0V VGS = 20V VDS = 120V, VGS = 0V VDS = 10V, ID = 250A VDS = 10V, ID = 4.0A VGS = 10V, ID = 4.0A VGS = 4V, ID = 4.0A VDS = 10V f = 1.0MHz VGS = 0V ID = 4A VDD 12V RL = 3 VGS = 5V RG = 50 ISD = 6A, VGS = 0V min 120 5 100 2.0 0.15 0.2 400 130 30 100 300 250 200 1.0 0.2 0.25 Ratings typ max (Ta=25C) Unit External Dimensions STA4 (LF412) 25.25 0.2 1.0 5.0 1.5 V A A V S pF pF pF ns ns ns ns V 0.2 0.2 9.0 0.2 b a 11.3 3.5 0.5 2.3 1.0 0.25 0.5 0.15 (2.54) 0 0.3 0 0.3 9 *2.54=22.86 0.05 0.15 1 2 3 4 5 6 7 8 9 10 SGDGDGDGDS a) Type No. b) Lot No. (Unit: mm) s ID -- VDS Characteristics 16 VGS = 10V s ID -- VGS Characteristics 10 VDS = 10V s RDS (on) -- ID Characteristics 0.30 0.25 VGS = 4V 12 8 VGS = 4.5V 6 8 RDS (on) () 0.20 0.15 VGS = 10V ID (A) ID (A) 4 4 2 Ta = -55C 25C 75C 150C 0.10 0.05 0 0 0 1 2 3 4 5 6 0 0 1.0 2.0 3.0 4.0 0 2 4 6 0.5 8 1.2 4.0 C1.5 0.5 0.2 0.2 10 VDS (V) VGS (V) ID (A) s RDS (on) -- TC Characteristics 0.45 0.40 ID = 4A VGS = 4V s Re (yfs) -- ID Characteristics 50 s IDR -- VSD Characteristics 6 VGS = 0V 5 10 0.30 4 Ta = 150C 75C 25C -55C RDS (on) () Re (yfs) (S) 5 IDR (A) 10 0.20 VGS = 10V 3 2 1 0 1 0.5 0.10 Ta = -55C 25C 75C 150C 0 -50 0 50 100 150 0.1 0.05 0.1 0.5 1 5 0 0.2 0.4 0.6 0.8 1.0 1.2 Tc (C) ID (A) VSD (V) s Capacitance -- VDS Characteristics 1000 500 Ciss s Safe Operating Area (single pulse) 20 10 5 ID (pulse) max ID (DC) max (Ta = 25C) 10 Equivalent Circuit Diagram Capacitance (pF) ID (A) VGS = 0V f = 1MHz RDS (on) LIMITED 10 10 0m 1m m s 0 s s 3 5 7 9 100 Coss 1 0.5 s 2 4 6 8 50 1 10 Crss 10 0 10 20 30 40 50 0.1 1 5 10 50 100 200 VDS (V) VDS (V) 79 |
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